2N6833

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO(SUS) VEBO IC ICM IB IBM PC TJ Tstg PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 850 450 6 5 10 4 8 80 150 -65~150 UNIT V V V A A A A W ℃ ℃ 2N6833 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.56 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV ICER IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current Gain-Bandwidth Product Output Capacitance CONDITIONS IC=100mA ; IB=0 IC= 1.5A; IB= 0.15A IC= 3A; IB= 0.4A IC= 3A; IB= 0.4A,TC=100℃ IC= 3A; IB= 0.4A IC= 3A; IB= 0.4A,TC=100℃ VCEV= 850V;VBE(off)= 1.5V VCEV= 850V;VBE(off)= 1.5V;TC=100℃ VCE= 850V; RBE= 50Ω,TC= 100℃ VEB= 6.0V; IC=0 IC= 3A ; VCE= 5V IC= 5A ; VCE= 5V IC= 0.25A ;VCE= 10V; ftest=10MHz IE= 0; VCB= 10V; ftest=1.0kHz 7.5 5 15 20 MIN 450 TYP. 2N6833 MAX UNIT V 1.0 2.5 2.5 1.5 1.5 0.25 1.5 2.5 1.0 30 V V V mA mA mA 75 200 MHz pF Switching times;Resistive Load td tr ts tf Delay Time Rise Time Storage Time Fall Time IC= 3A , VCC= 250V; IB1= 0.4A; IB2= -0.8A; PW = 30μs; RB2= 8Ω Duty Cycle≤2.0% 0.03 0.1 1.0 0.06 0.1 0.3 3.0 0.3 μs μs μs μs isc Website：www.iscsemi.cn 2