2SA1008

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC2331 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters ·High frequency power amplifiers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SA1008 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Ta=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -2.0 -4.0 -1.0 1.5 UNIT V V V A A A PT Total power dissipation TC=25℃ 15 150 -55~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-1.0A ,IB=-0.1A,L=1mH IC=-1A; IB=-0.1A IC=-1A ;IB=-0.1A B 2SA1008 MIN -100 TYP. MAX UNIT V -0.6 -1.5 -10 -10 40 40 200 V V μA μA VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-5V IC=-1A ; VCE=-5V Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=-1.0A IB1=- IB2=-0.1A RL=50Ω;VCC≈50V 0.5 1.5 0.5 μs μs μs hFE-2 Classifications M 40-80 L 60-120 K 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1008 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1008 4 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1008 5