0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2SA1010

2SA1010

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SA1010 - isc Silicon PNP Power Transistor - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2SA1010 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1010 DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SC2334 APPLICATIONS ·Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reglators, DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -7.0 A ICM Collector Current-Peak -15 A IB B Base Current-Continuous Collector Power Dissipation @ Ta=25℃ -3.5 A 1.5 W PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS)-1 VCEX(SUS)-2 VCE(sat) VBE(sat) ICBO ICER ICEX IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= -5.0A ; IB= -0.5A, L=1mH IC= -5.0A ; IB1=-IB2= -0.5A, VBE(OFF)=5.0V, L=180μH,clamped IC= -10A ; IB1= -1.0A; IB2= -0.5A, VBE(OFF)= 5.0V, L= 180μH,clamped IC= -5.0A; IB= -0.5A B 2SA1010 MIN -100 -100 -100 MAX UNIT V V V -0.6 -1.5 -10 -1.0 -10 -1.0 -10 40 40 20 200 200 V V μA mA μA mA μA IC= -5.0A; IB= -0.5A B VCB= -100V ; IE=0 VCE= -100V ; RBE= 51Ω,Ta=125℃ VCE= -100V; VBE(off)= -1.5V VCE= -100V; VBE(off)= -1.5V,Ta=125℃ VEB= -5V; IC=0 IC= -0.5A ; VCE= -5V IC= -3.0A ; VCE= -5V IC= -5.0A ; VCE= -5V Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= -5.0A ,RL= 10Ω, IB1= -IB2= -0.5A,VCC≈-50V 0.5 1.5 0.5 μs μs μs hFE-2 Classifications M 40-80 L 60-120 K 100-200 isc Website:www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1010 isc Website:www.iscsemi.cn 3
2SA1010 价格&库存

很抱歉,暂时无法提供与“2SA1010”相匹配的价格&库存,您可以联系我们找货

免费人工找货