2SA1041

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1041 DESCRIPTION ·With TO-3 package ·High transition frequency ·Excellent safe operating area APPLICATIONS ·Power switching applications ·High frequency power amplifier ·Switching regulators ·DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -7 -15 100 175 -55~200 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1041 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-0.1mA ;IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-0.1mA ;IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A -1.5 V VBEsat Base-emitter saturation voltage IC=-7A; IB=-0.7A -1.8 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -50 μA hFE DC current gain IC=-1.5A ; VCE=-5V 35 200 COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz 350 pF fT Transition frequency IC=-1A ; VCE=-10V 60 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1041 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3