2SA1060

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1060 DESCRIPTION ·With TO-3PN package ·Complement to type 2SC2484 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -6 -5 -8 60 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-3A ;IB=-0.3A B 2SA1060 MIN -80 TYP. MAX UNIT V -2.0 -1.8 -50 -50 20 40 20 20 200 V V μA μA IC=-3A;VCE=-5V VCB=-80V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A ; VCE=-5V MHz hFE-2 Classifications R 40-80 Q 60-120 P 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1060 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3