2SA1064

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1064 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Complement to type 2SC2488 ·High transition frequency APPLICATIONS ·For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -8 -12 100 150 -65~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1064 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A ;IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A B -2.0 V VBE Base-emitter on voltage IC=-8A;VCE=-5V -2.5 V ICBO Collector cut-off current VCB=-70V; IE=0 -1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 40 280 hFE-2 DC current gain IC=-8A ; VCE=-5V 20 fT Transition frequency IC=-0.5A ; VCE=-5V 50 MHz hFE-1 Classifications R 40-80 Q 60-120 P 90-180 O 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1064 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3