2SA1067

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1067 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·For audio and general purpose amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -10 -14 100 150 -65~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1067 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-3A ; VCE=-4V 60 150 fT Transition frequency IC=-0.5A ; VCE=-10V 50 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1067 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3