2SA1074

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1074 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·For high power audio ,stepping motor and other linear applications ·Relay or solenoid drviers ·DC-DC converters inverters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -7 -15 -7 150 150 -65~200 UNIT V V V A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.98 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICEO ICEV IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-0.2A ;IB=0 IC=-4A; IB=-0.4A IC=-10A; IB=-3.3A IC=-4A ; VCE=-4V VCE=-60V; VBE(off)=0 VCE=Rated Value; VBE(off)=1.5V TC=150℃ VEB=-7V; IC=0 IC=-4A ; VCE=-4V IC=-10A ; VCE=-4V 20 5 MIN -160 2SA1074 TYP. MAX UNIT V -1.1 -3.0 -1.8 -0.1 -1.0 -6.0 -0.1 V V V mA mA mA 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1074 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3