2SA1093

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1093 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Fig.1 simplified outline (TO-3P(I)) and symbol Base Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -8 -0.8 80 150 -55~150 UNIT V V V A A W ℃ ℃ PT Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA ,IB=0 IC=-4A; IB=-0.4A IC=-4A ; VCE=-5V VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-1A ; VCE=-10V IE=0 ; VCB=-10V ;f=1MHz 55 30 MIN -120 2SA1093 TYP. MAX UNIT V -1.0 -1.5 -2.0 -2.5 -50 -50 240 V V μA μA 90 150 MHz pF hFE-1 Classifications R 55-110 O 80-160 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1093 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3