2SA1094

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1094 DESCRIPTION ·With MT-200 package ·Complement to type 2SC2564 APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -5 -12 -1.2 120 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-0.1A ; IB=0 B 2SA1094 MIN -140 -5 TYP. MAX UNIT V V IE=-0.01A ; IC=0 IC=-5A ;IB=-0.5A B -2.0 -2.0 -50 -50 55 30 220 70 240 V V μA μA IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-10V pF MHz hFE-1 classifications R 55-110 O 80-160 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1094 Fig.2 outline dimensions 3