2SA1116

INCHANGE Semiconductor isc Product Specification 2SA1116 isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature -5 A PC 150 W Tj 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SA1116 isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V ICBO Collector Cutoff Current VCB= -200V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -100 μA hFE DC Current Gain IC= -5A ; VCE= -4V 30 fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= -12V 20 MHz Switching Times tr Rise Time IC= -5A, RL= 12Ω, IB1= -IB2= -0.5A, VCC= -60V 0.3 μs tstg Storage Time 0.9 μs tf Fall Time 0.2 μs isc Website：www.iscsemi.cn