2SA1117

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1117 DESCRIPTION ·With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -6 -17 -5 200 150 -65~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1117 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-8A ; VCE=-4V 20 fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1117 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3