2SA1120

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1120 DESCRIPTION ·With TO-126 package ·High transition frequency ·Low collector saturation voltage APPLICATIONS ·Audio power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 5 150 -55～+150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -35 -35 -6 -5 -1 1.5 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1120 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -35 V VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.1A -1.0 V VBE Base-emitter on voltage IC=-4A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=-35V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE-1 DC current gain IC=-500mA ; VCE=-2V 200 hFE-2 DC current gain IC=-4A ; VCE=-2V 70 Cob Output capacitance IE=0 ; VCB=-10V f=1MHz 62 pF fT Transition frequency IC=-500mA ; VCE=-2V 170 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1120 Fig.2 Outline dimensions 3