2SA1141

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SC2681 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SA1141 · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -115 -115 -5 -10 -15 100 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1141 MAX UNIT VCEsat Collector-emitter saturation voltage IC=-4.5A ;IB=-0.45A -0.7 -1.5 V VBE ICBO Base-emitter on voltage IC=-4.5A ; VCE=-2V VCB=-80V; IE=0 -1.2 -2.0 V μA μA Collector cut-off current -50 IEBO Emitter cut-off current VEB=-5V; IC=0 -50 hFE -1 DC current gain IC=-1A ; VCE=-2V 60 200 hFE -2 DC current gain IC=-4.5A ; VCE=-2V 40 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 390 pF fT Transition frequency IC=-1A ; VCE=-2V 90 MHz hFE-1 classifications R 60-120 Q 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1141 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3