2SA1142

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1142 DESCRIPTION ·With TO-126 package ·Complement to type 2SC2682 APPLICATIONS ·Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-126) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 8 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -5 -0.1 1.2 W UNIT V V V A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1142 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-50mA; IB=-5mA -0.16 -0.5 V VBEsat Base-emitter saturation voltage IC=-50mA; IB=-5mA -0.8 -1.5 V μA μA ICBO Collector cut-off current VCB=-180V; IE=0 -1 IEBO Emitter cut-off current VEB=-3V; IC=0 -1 hFE-1 DC current gain IC=-1mA ; VCE=-5V 90 200 hFE-2 DC current gain IC=-10mA ; VCE=-5V 100 200 320 fT Transition frequency IC=-20mA ; VCE=-10V 180 MHz Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 4.5 pF hFE-2 Classifications O 100-200 Y 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1142 Fig.2 Outline dimensions 3