2SA1169

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1169 DESCRIPTION ·With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING (see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -6 -15 -5 150 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1169 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0 B -200 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ; IE=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.5 V ICBO Collector cut-off current VCB=-200V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-5A ; VCE=-4V 50 fT Transition frequency IC=-1A ; VCE=-10V 20 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1169 Fig.2 outline dimensions 3