2SA1187

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1187 DESCRIPTION ·With MT-200 package ·High current capability APPLICATIONS ·Audio and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -5 -12 -2 120 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-25mA ;IB=0 IC=-5A; IB=-0.5A VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-4V IE=0 ; VCB=-80V;f=1MHz IE=1A ; VCE=-12V 50 110 60 MIN -150 TYP. 2SA1187 MAX UNIT V -2.0 -0.1 -0.1 V mA mA pF MHz hFE Classifications O 50-100 P 70-140 Y 90-180 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1187 Fig.2 outline dimensions 3