2SA1232

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1232 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SC3012 APPLICATIONS ·Audio frequency power amplifier. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -130 -130 -5 -10 -15 100 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1232 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.6 -1.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.3 -2.0 V μA μA ICBO Collector cut-off current VCB=-130V; IE=0 -50 IEBO Emitter cut-off current VEB=-3V; IC=0 -50 hFE-1 DC current gain IC=-2A ; VCE=-5V 60 320 hFE-2 DC current gain IC=-5A ; VCE=-5V 40 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF fT Transition frequency IC=-1A ; VCE=-5V 60 MHz hFE-1 Classifications R 60-120 Q 100-200 P 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1232 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3