2SA1249

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1249 DESCRIPTION ·With TO-126 package ·Complement to type 2SC3117 ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output,converters, Inverters applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -180 -160 -6 -1.5 -2.5 1.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-1mA; RBE=∞ IC=-10μA; IE=0 IE=-10μA ; IC=0 IC=-500mA; IB=-50mA B 2SA1249 MIN TYP. -160 -180 -6 -0.2 -0.85 MAX UNIT V V V -0.5 -1.2 -1.0 -1.0 V V μA μA IC=-500mA; IB=-50mA B VCB=-120V; IE=0 VEB=-4V; IC=0 IC=-100mA ; VCE=-5V IC=-10mA ; VCE=-5V IC=-50mA ; VCE=-10V IE=0 ; VCB=-10V;f=1MHz 100 90 120 22 400 MHz pF hFE-1 Classifications R 100-200 S 140-280 T 200-400 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1249 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1249 4