2SA1250

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·High breadown voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2SA1250 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -200 V VEBO Emitter-base voltage Open collector -7 V IC Collector current TC=25℃ -8 A PD Total power dissipation 30 W ℃ ℃ Tj Tstg Junction temperature 150 Storage temperature -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1250 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=200V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -10 μA hFE-1 DC current gain IC=-2A ; VCE=-1V 40 200 hFE-2 DC current gain IC=-5A ; VCE=-1V 20 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1250 Fig.2 outline dimensions 3