Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1261
DESCRIPTION ·With TO-220 package ·High switching speed ·Low collector saturation voltage ·Complement to type 2SC3157 APPLICATIONS ·For high voltage ,high speed and power switching applications PINNING
PIN 1 2 3 Emitter Collector Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS (TC=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Ta=25℃ Open emitter Open base
CONDITIONS
VALUE -100 -100 -7 -10 -20 -3.5 1.5
UNIT V V V A A A
Open collector
PT
Total power dissipation TC=25℃ 60 150 -55~150
W
Tj Tstg
Junction temperature Storage temperature
℃ ℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1261
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=-5A ;IB1=-0.5A;L=1mH IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-100V; IE=0 VCE=-100V; VBE=-1.5V Ta=125℃ VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-5A ; VCE=-5V 40 40 20 MIN -100 -0.6 -1.5 -0.01 -0.01 -1.0 -0.01 200 200 TYP. MAX UNIT V V V mA mA mA
Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A;IB1=-IB2=-0.5A , RL=10Ω;VCC=-50V 0.5 1.5 0.5 μs μs μs
hFE-2 classifications M 40-80 L 60-120 K 100-200
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1261
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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