2SA1290

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1290 DESCRIPTION ·With TO-220 package ·Short switching time ·Low collector saturation voltage ·Complement to type 2SC3254 APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters,converters ·Power amplifier ·Switching regulator ,driver PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -60 -5 -7 -10 35 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ,RBE=∞ IC=-1mA ,IE=0 IE=-1mA ,IC=0 IC=-3.5A; IB=-0.175A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-1A ; VCE=-5V 70 100 MIN -60 -80 -7 TYP. 2SA1290 MAX UNIT V V V -0.4 -100 -100 280 V μA μA MHz Switching times ton tstg tf Turn-on time Storage time Fall time VCC=-20V; IC=-3A IB1=-IB2=-0.15A;RL=6.67Ω 0.1 0.5 0.1 μs μs μs hFE Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1290 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1290 4