2SA1293

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1293 DESCRIPTION ·With TO-220 package ·Complement to type 2SC3258 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -100 -80 -7 -5 -8 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ,IB=0 IC=-3A; IB=-0.15A IC=-3A; IB=-0.15A VCB=-100V; IE=0 VEB=-7V; IC=0 IC=-1A ; VCE=-1V IC=-3A ; VCE=-1V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-4V 70 30 MIN -80 2SA1293 TYP. MAX UNIT V -0.2 -0.9 -0.4 -1.2 -1 -1 240 V V μA μA 200 60 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IB1=- IB2=-0.15A RL=10Ω;VCC≈30V 0.2 1.0 0.1 μs μs μs hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1293 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1293 4