2SA1302

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) ·Complement to Type 2SC3281 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -1.5 A PC 150 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1302 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V VBE(on) Base-Emitter On Voltage IC= -8A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -200V ; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -8A ; VCE= -5V 35 COB Output Capacitance IE= 0;VCB= -10V;ftest= 1.0MHz 470 pF fT Current-Gain—Bandwidth Product IC= -1A ; VCE= -5V 25 MHz hFE-1 Classifications R 55-110 O 80-160 isc Website：www.iscsemi.cn 2