INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
2SA1303
DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3284
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-14
A
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
-3
A
PC
125
W
TJ
150
℃
Tstg
Storage Temperature Range
-55~150
℃
INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA1303
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -25mA ; IB= 0
-150
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -5A; IB= -0.5A
B
-2.0
V
ICBO
Collector Cutoff Current
VCB= -150V ; IE= 0
-100
μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-100
μA
hFE
DC Current Gain
IC= -5A ; VCE= -4V
50
180
COB
Output Capacitance
IE= 0 ; VCB= -10V;f= 1.0MHz
400
pF
fT
Current-Gain—Bandwidth Product
IE= 2A ; VCE= -12V
50
MHz
Switching Times
ton
Turn-on Time IC= -5A ,RL= 12Ω, IB1= -IB2= -0.5A,VCC= -60V
0.25
μs
tstg
Storage Time
0.85
μs
tf
Fall Time
0.2
μs
hFE Classifications O 50-100 P 70-140 Y 90-180
2
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