2SA1304

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1304 DESCRIPTION ·With TO-220Fa package ·Complement to type 2SC3296 ·High breakdown voltage APPLICATIONS ·Power amplifier applications ·Vertical output applicatios PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base · Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -1.5 -0.5 20 UNIT V V A A PC Collector power dissipation Ta=25℃ 2 150 -55~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1304 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0 B -150 V VCEsat VBE Collector-emitter saturation voltage IC=-500mA; IB=-50mA B -1.5 V Base-emitter on voltage IC=-500mA ; VCE=-10V -0.85 V μA μA ICBO Collector cut-off current VCB=-120V;IE=0 -10 IEBO Emitter cut-off current VEB=-5V; IC=0 -10 hFE DC current gain IC=-500mA ; VCE=-10V 40 140 Cob Output capacitance IE=0; VCB=-10V,f=1MHz 55 pF fT Transition frequency IC=-500mA ; VCE=-10V 4 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1304 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1304 4