2SA1306B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER 2SA1306 VCBO Collector-Base Voltage 2SA1306A 2SA1306B 2SA1306 VCEO Collector-Emitter Voltage 2SA1306A 2SA1306B VEBO IC IB B VALUE -160 -180 -200 -160 -180 -200 -5 -1.5 -0.15 20 150 -55~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range V A A W ℃ ℃ PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1306/A/B TYP. MAX UNIT 2SA1306 Collector-Emitter Breakdown Voltage -160 V(BR)CEO 2SA1306A IC= -10mA; IB= 0 -180 V 2SA1306B -200 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V VBE(on) Base-Emitter On Voltage IC= -500mA; VCE= -5V -1.0 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -1.0 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -1.0 μA hFE DC Current Gain IC= -100mA ; VCE= -5V 70 240 fT Current-Gain—Bandwidth Product IC= -100mA ; VCE= -10V 100 MHz COB Output Capacitance IE= 0 ; VCB= -10V;ftest= 1.0MHz 30 pF hFE Classifications O 70-140 Y 120-240 isc Website：www.iscsemi.cn 2