2SA1329

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1329 DESCRIPTION ·With TO-220 package ·Complement to type 2SC3346 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -6 -12 -2 40 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-50mA ,IB=0 IC=-6A; IB=-0.3A IC=-6A; IB=-0.3A VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-1V IC=-6A ; VCE=-1V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-5V 70 40 400 50 MIN -80 2SA1329 TYP. MAX UNIT V -0.2 -0.9 -0.4 -1.2 -10 -10 240 V V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IB1=- IB2=-0.3A RL=5Ω;VCC=-30V 0.3 1.0 0.5 μs μs μs hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1329 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1329 4