2SA1332

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1332 DESCRIPTION ·With TO-220Fa package ·High VCEO APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -1.5 -0.15 20 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 B 2SA1332 MIN -160 -5 TYP. MAX UNIT V V IE=1mA , IC=0 IC=-0.5A, IB=-50mA IC=-0.1A ; VCE=-10V VCB=-160V, IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-10V IC=-0.1A ; VCE=-10V -1.5 -1.0 -1.0 -1.0 60 200 240 V V μA μA MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1332 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3