2SA1357

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1357 DESCRIPTION ·High Collector Current-IC= -5.0A ·DC Current Gain: hFE= 70(Min)@IC= -4A ·Low Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A APPLICATIONS ·Strobe flash applications. ·Audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation @ TC=25℃ VALUE -35 -20 -8 -5 -8 -1 10 UNIT V V V A A A PC Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range 1.5 150 -55~150 W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1357 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -20 V VCE(sat) VBE(on) ICBO IEBO Collector-Emitter Saturation Voltage IC= -4A; IB= -0.1A B -1.0 V Base-Emitter On Voltage IC=-4A ; VCE= -2V -1.5 V μA μA Collector Cutoff Current VCB= -35V; IE= 0 VEB= -8V; IC= 0 -0.1 Emitter Cutoff Current -0.1 hFE-1 DC Current Gain IC= -0.5A ; VCE= -2V 100 320 hFE-2 DC Current Gain IC= -4A ; VCE= -2V 70 fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -2V 170 MHz COB Output Capacitance IE= 0 ; VCB= -10V,ftest= 1MHz 62 pF hFE-1 Classifications O 100-200 Y 160-320 isc Website：www.iscsemi.cn 2