2SA1359

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1359 DESCRIPTION ·With TO-126 package ·Complement to type 2SC3422 ·Good linearity of hFE APPLICATIONS ·Audio frequency amplifier ·Low speed switching ·Suitable for output stage of 5W car radio and car stereo PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55～+150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -40 -40 -5 -3 -1 1.5 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1359 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -40 V VCEsat VBE Collector-emitter saturation voltage IC=-2A; IB=-0.2A IC=-0.5A ; VCE=-2V -0.8 V Base-emitter on voltage -1.0 V μA μA ICBO Collector cut-off current VCB=-40V; IE=0 -0.1 IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 hFE-1 DC current gain IC=-0.5A ; VCE=-2V 80 240 hFE-2 DC current gain IC=-2.5A ; VCE=-2V 25 Cob fT Output capacitance IE=0 ; VCB=-10V f=1MHz IC=-0.5A ; VCE=-2V 35 pF Transition frequency 100 MHz hFE-1 Classifications O 80-160 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1359 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1359 4