2SA1386

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1386 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3519 APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -4 A PC 130 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1386 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -160 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A B -2.0 V ICBO Collector Cutoff Current VCB= -160V ; IE=0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -100 μA hFE DC Current Gain IC= -5A ; VCE= -4V 50 180 COB Output Capacitance IE=0 ; VCB= -10V;f= 1.0MHz 500 pF fT Current-Gain—Bandwidth Product IE=2A ; VCE= -12V 40 MHz Switching times ton Turn-on Time IC= -10A ,RL= 4Ω, IB1= -IB2= -1A,VCC=-40V 0.3 μs tstg Storage Time 0.7 μs tf Fall Time 0.2 μs hFE Classifications O 50-100 P 70-140 Y 90-180 isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1386 isc Website：www.iscsemi.cn