2SA1387

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1387 DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·High DC current gain APPLICATIONS · ·High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -7 -5 -1 2 UNIT V V V A A PC Collector power dissipation TC=25℃ 20 150 -55~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1387 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Trainsition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-3A ;IB=-0.075A B MIN -50 TYP. MAX UNIT V -0.15 -0.8 -0.4 -1.2 -1 -1 V V μA μA IC=-3A ; IB=-0.075A VCB=-50V; IE=0 VEB=-7V; IC=0 IC=-1A ; VCE=-1V IC=-3A ; VCE=-1V IC=-1A ; VCE=-4V IE=0; VCE=-10V;f=1MHz 150 70 400 80 200 MHz pF Switching times Ton ts tf Turn-on time Storage time Fall time IB1=-IB2=-0.075A VCC≈-30V;RL=10Ω 0.2 1.0 0.2 μs μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1387 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1387 4