2SA1388

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1388 DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complementary to 2SC3540 APPLICATIONS · ·High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulse) Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -80 -7 -5 -8 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1388 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Trainsition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-3A ;IB=-0.15A B MIN -80 TYP. MAX UNIT V -0.2 -0.9 -0.4 -1.2 -1 -1 V V μA μA IC=-3A ;IB=-0.15A B VCB=-100V; IE=0 VEB=-7V; IC=0 IC=-1A ; VCE=-1V IC=-3A ; VCE=-1V IC=-1A ; VCE=-4V IE=0; VCE=-10V;f=1MHz 70 30 60 200 240 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=-0.15A VCC=30V;RL=10Ω 0.2 1.0 0.1 μs μs μs hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1388 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1388 4