2SA1443

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1443 DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Fast switching speed ·High DC current gain APPLICATIONS ·High speed power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -60 -7 -10 -20 -5 30 UNIT V V V A A A PC Collector power dissipation Ta=25℃ 2 150 -55~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 Cob fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-6A , IB=-0.6A;L=1mH IC=-6A, IB=-0.3A IC=-8A, IB=-0.4A IC=-6A, IB=-0.3A IC=-8A, IB=-0.4A VCB=-60V, IE=0 VCE=-60V,VBE=1.5V Ta=125℃ VEB=-5V; IC=0 IC=-1A ; VCE=-2V IC=-2A ; VCE=-2V IC=-6A ; VCE=-2V IE=0 ; VCB=-10V,f=1MHz IC=-1A ; VCE=-10V 100 100 60 230 80 MIN -60 TYP. 2SA1443 MAX UNIT V -0.3 -0.5 -1.2 -1.5 -10 -10 -1.0 -10 V V V V μA μA mA μA 400 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-6A ; RL=8.3Ω IB1=- IB2=-0.3A VCC≈-50V 0.3 1.5 0.3 μs μs μs hFE-2 Classifications M 100-200 L 150-300 K 200-400 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1443 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3