2SA1451

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1451 DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complement to type 2SC3709 APPLICATIONS · ·High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -12 -2 30 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg TC=25℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1451 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-6A ;IB=-0.3A B MIN -50 TYP. MAX UNIT V -0.15 -0.9 -0.4 -1.2 -10 -10 V V μA μA IC=-6A ;IB=-0.3A B VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-1V IC=-6A ; VCE=-1V IC=-1A ; VCE=-5V IE=0; VCE=-10V;f=1MHz 70 40 70 320 240 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=-0.3A VCC≈-30V;RL=5Ω 0.3 1.0 0.5 μs μs μs hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1451 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1451 4