2SA1469

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SC3746 ·Low saturation voltage ·Excellent current dependence of hFE ·Short switching time APPLICATIONS ·Various inductance of lamp drivers for electrical equipment ·Inverters ,converters ·Power amplification ·Switching regulator ,driver PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SA1469 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -60 -5 -5 -7 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=∞ IC=-10mA ;IE=0 IE=-10mA ;IC=0 IC=-2.5A IB=-0.125A VCB=-40V IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-1A ; VCE=-5V 70 MIN -60 -80 -5 2SA1469 TYP. MAX UNIT V V V -0.4 -0.1 -0.1 280 100 V mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-2.0A;IB1=-IB2=-0.1A VCC=20V ,RL=10Ω 0.1 0.5 0.1 μs μs μs hFE Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1469 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1469 4