2SA1471

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fpackage ·Low saturation voltage. ·Complement to type 2SC3748 ·Fast switching speed. APPLICATIONS ·Car-use inductance drivers, lamp drivers. ·Inverters drivers, converters ·Power amplifications ·Switching regulators,drivers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SA1471 · Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -60 -5 -10 -12 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1471 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA; IE=0 IC=-1mA; RBE=∞ IE=-1mA; IC=0 IC=-5A; IB=-0.25A VCB=-40V ;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-1A ; VCE=-5V 70 100 MIN -80 -60 -5 -0.4 -100 -100 280 MHz TYP. MAX UNIT V V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time VCC=20V; IC=5A IB1=-IB2=-0.25A RL=4Ω 0.1 0.5 0.1 μs μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1471 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1471 4