2SA1488A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1488 2SA1488A DESCRIPTION ·With TO-220F package ·Complement to type 2SC3851/3851A APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SA1488 VCBO Collector-base voltage 2SA1488A 2SA1488 VCEO Collector-emitter voltage 2SA1488A VEBO IC IB B CONDITIONS VALUE -60 UNIT Open emitter -80 -60 Open base -80 Open collector -6 -4 -1 TC=25℃ 25 150 -55~150 V V Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA1488 IC=-25mA ; IB=0 B 2SA1488 2SA1488A CONDITIONS MIN -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 2SA1488A VCEsat Collector-emitter saturation voltage 2SA1488 2SA1488A IEBO hFE fT COB Emitter cut-off current DC current gain Transition frequency Output capacitance IC=-2.0A;IB=-0.2A VCB=-60V;IE=0 -0.5 V ICBO Collector cut-off current -0.1 VCB=-80V;IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-4V IC=-0.2A ; VCE=-12V IE=0 ; VCB=-10V;f=1MHz 40 15 90 -0.1 mA mA MHz pF Switching time ton ts tf Turn-on time Storage time Fall time IC=-2.0A; IB1=-IB2=-0.2A VCC=-12V ,RL=6Ω 0.25 0.75 0.25 μs μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1488 2SA1488A Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1488 2SA1488A 4