2SA1490

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1490 DESCRIPTION ·With TO-3PN package ·Complement to type 2SC3854 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -6 -8 -3 80 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1490 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -120 V VCEsat ICBO Collector-emitter saturation voltage IC=-3A; IB=-0.3A VCB=-120V; IE=0 -1.5 V μA μA Collector cut-off current -100 IEBO Emitter cut-off current VEB=-6V; IC=0 -100 hFE DC current gain IC=-3A ; VCE=-4V 50 fT Transition frequency IC=0.5A ; VCE=-12V 20 MHz Switching times μs μs μs ton ts Turn-on time IC=-4A;RL=10Ω IB1=-IB2=-0.4A VCC=40V 0.25 Storage time 0.7 tf Fall time 0.2 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1490 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3