Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1493
DESCRIPTION ·With MT-200 package ·Complement to type 2SC3857 APPLICATIONS ·Audio and general purpose
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION
·
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25℃
CONDITIONS Open emitter Open base Open collector
VALUE -200 -200 -6 -15 -5 150 150 -55~150
UNIT V V V A A W ℃ ℃
PC Tj Tstg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-10 A;IB=-1 A VCB=-200V; IE=0 VEB=-6V; IC=0 IC=-5A ; VCE=-4V IC=-0.5A ; VCE=-12V IE=0; VCB=-10V;f=1MHz 50 20 400 MIN -200
2SA1493
TYP.
MAX
UNIT V
-3.0 -100 -100 180
V μA μA
MHz pF
Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A;RL=-12Ω IB1=-IB2=-0.5A VCC=-60V 0.30 0.90 0.20 μs μs μs
hFE classifications O 50-100 P 70-140 Y 90-180
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1493
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1493
4
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