2SA1494

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION ·Collector-Emitter Breakdown VoltageV(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3858 APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -17 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ -5 A PC 200 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1494 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -2.5 V ICBO Collector Cutoff Current VCB= -200V ; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -100 μA hFE DC Current Gain IC= -8A ; VCE= -4V 50 180 COB Output Capacitance IE= 0 ; VCB= -10V;ftest= 1.0MHz 500 pF fT Current-Gain—Bandwidth Product IE= 1A ; VCE= -12V 20 MHz Switching times ton Turn-on Time IC= -10A ,RL= 4Ω, IB1= -IB2= -1A,VCC= -40V 0.6 μs tstg Storage Time 0.9 μs tf Fall Time 0.2 μs hFE Classifications Y 50-100 P 70-140 G 90-180 isc Website：www.iscsemi.cn 2