2SA1535

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A ·Good Linearity of hFE ·Complement to Type 2SC3944/A APPLICATIONS ·Designed for low-frequency driver and high power amplification, is optimum for the driver-stage of a 60W to 100 W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER 2SA1535 VCBO Collector-Base Voltage 2SA1535A 2SA1535 VCEO Collector-Emitter Voltage 2SA1535A VEBO IC IC Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Collector Power Dissipation @ Ta=25℃ Junction Temperature Storage Temperature Range -180 -5 -1 -1.5 15 W 2 150 -55~150 ℃ ℃ V A A -180 -150 V VALUE -150 V UNIT PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1535/A TYP. MAX UNIT 2SA1535 V(BR)CEO Collector-Emitter Breakdown Voltage 2SA1535A IE= -10μA ; IC= 0 IC= -50mA ; IB= 0 -150 V -180 V(BR)EBO Emitter-Base Breakdown Voltage -5 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -2.0 V Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -2.0 V μA Collector Cutoff Current VCB= -150V ; IE= 0 -10 hFE-1 DC Current Gain IC= -150mA ; VCE= -10V 90 330 hFE-2 DC Current Gain IC= -0.5A ; VCE= -5V 50 COB Output Capacitance IE= 0; VCB= -10V;ftest= 1MHz IC= -50mA;VCE= -10V;ftest= 10MHz 30 pF fT Current-Gain—Bandwidth Product 200 MHz hFE-1 Classifications Q 90-155 R 130-220 S 185-330 isc Website：www.iscsemi.cn 2