Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1633
DESCRIPTION ·With TO-247 package ·Complement to type 2SC4278 ·High current and high power capability APPLICATIONS ·For audio output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and DESCRIPTION
·
Absolute maximum ratings(Tc=25℃)
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -6 -10 100 150 -55~150 UNIT V V V A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1633
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA; IB=0
-150
V
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
B
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-5A ;IB=-0.5A
B
-2.0
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.1
mA
hFE
DC current gain
IC=-1A ; VCE=-5V
60
320
fT
Transition frequency
IC=-1A ; VCE=-10V
20
MHz
hFE Classifications D 60-120 E 100-200 F 160-320
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1633
Fig.2 Outline dimensions
3
很抱歉,暂时无法提供与“2SA1633”相匹配的价格&库存,您可以联系我们找货
免费人工找货