2SA1635

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1635 DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SC4008 APPLICATIONS ·For medium speed,electrical supply and DC-DC converter applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -4 30 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE sat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ,IB=0 B 2SA1635 MIN -80 -5 TYP. MAX UNIT V V IE=-0.1mA ,IC=0 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-12V -1.5 -1.5 -10 -10 60 80 12 320 V V μA μA pF MHz hFE Classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1635 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3