2SA1640

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1640 DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For switching regulator ,driver and power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -30 -30 -5 -7 -1 40 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1640 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 B -30 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ; IE=0 -30 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.1A B -0.4 V VBEsat Base-emitter saturation voltage IC=-3A ;IB=-0.1A B -1.0 V ICBO Collector cut-off current VCB=-30V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-0.2A ; VCE=-2V 100 300 fT Transition frequency IC=-0.5A ; VCE=-10V 20 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1640 Fig.2 Outline dimensions 3