2SA1659A

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) Base Current Collector Power Dissipation @TC=25℃ Junction Temperature -0.15 A PC 20 W ℃ TJ 150 Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1659 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -160 V VCE(sat) ICBO Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V μA μA Collector Cutoff Current VCB= -160V ; IE=0 -1.0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 -1.0 hFE DC Current Gain IC= -100mA ; VCE= -5V 70 240 COB Output Capacitance IE=0 ; VCB= -10V;f= 1.0MHz 30 pF fT Current-Gain—Bandwidth Product IC=-100m A ; VCE= -10V 100 MHz hFE Classifications O 70-140 Y 120-240 isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1659 isc Website：www.iscsemi.cn 3