2SA1670

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1670 DESCRIPTION ·With TO-3PML package ·Complement to type 2SC4385 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -6 -6 -3 60 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1670 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -80 V VCEsat ICBO Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A B -1.5 V μA μA Collector cut-off current VCB=-80V; IE=0 -10 IEBO Emitter cut-off current VEB=-6V; IC=0 -10 hFE DC current gain IC=-2A ; VCE=-4V 50 fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz Switching times μs μs μs ton tstg Turn-on time IC=-3A;RL=10Ω IB1=-IB2=-0.3A VCC=-30V 0.25 Storage time 0.5 tf Fall time 0.1 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1670 Fig.2 Outline dimensions 3