2SA1672

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1672 DESCRIPTION ·With TO-3PML package ·Complement to type 2SC4387 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -140 -140 -6 -10 -4 80 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA; IB=0 IC=-5 A;IB=-0.5 A B 2SA1672 MIN -140 TYP. MAX UNIT V -2.0 -10 -10 50 20 180 V μA μA VCB=-140V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-5A;RL=12Ω IB1=-IB2=-0.5A VCC=-60V 0.30 0.90 0.20 μs μs μs hFE classifications O 50-100 P 70-140 Y 90-180 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1672 Fig.2 Outline dimensions 3