2SA1694

INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1694 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4467 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -3 A PC 80 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1694 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.5 V ICBO Collector Cutoff Current VCB= -120V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -3A ; VCE= -4V 50 180 COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 300 pF fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 20 MHz Switching Times ton Turn-on Time IC= -4A ,RL= 10Ω, IB1= -IB2= -0.4A,VCC= -40V 0.14 μs tstg Storage Time 1.4 μs tf Fall Time 0.21 μs hFE Classifications O 50-100 P 70-140 Y 90-180 2