INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
2SA1694
DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4467
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-8
A
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
-3
A
PC
80
W
TJ
150
℃
Tstg
Storage Temperature Range
-55~150
℃
INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA1694
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -50mA ; IB= 0
-120
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -3A; IB= -0.3A
B
-1.5
V
ICBO
Collector Cutoff Current
VCB= -120V ; IE= 0
-10
μA
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
-10
μA
hFE
DC Current Gain
IC= -3A ; VCE= -4V
50
180
COB
Output Capacitance
IE= 0 ; VCB= -10V;f= 1.0MHz
300
pF
fT
Current-Gain—Bandwidth Product
IE= 0.5A ; VCE= -12V
20
MHz
Switching Times
ton
Turn-on Time IC= -4A ,RL= 10Ω, IB1= -IB2= -0.4A,VCC= -40V
0.14
μs
tstg
Storage Time
1.4
μs
tf
Fall Time
0.21
μs
hFE Classifications O 50-100 P 70-140 Y 90-180
2
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